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cha6250 - qfg ref. : dscha6250 - qfg2272 - 28 sep 12 1 / 14 specifications subject to change without notice united monolithic semiconductors s.a.s. bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel .: +33 (0) 1 69 86 32 00 - fa x: +33 (0) 1 69 86 34 34 5.5 - 9ghz power amplifier gaas monolithic microwave ic in smd leadless package description the cha6250 - qfg is a three stages monolithic gaas h igh power circuit that produces more than 2 watt output power . it is designed for commercial communication systems. the circuit is manufa ctured with a phemt process, 0.5m gate length. main features output power at 1db comp. main electrical characteristics tamb. = + 25c symbol parameter min typ max unit freq frequency range 5.5 9.0 ghz gain linear gain 23.5 db o toi output toi 43.0 db m pout output power @1db comp. 33.5 dbm 28 29 30 31 32 33 34 35 36 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 output p1db (db) frequency (ghz) temp=25 c temp= - 40 c temp=+85 c
cha6250 - qfg 5.5 - 9ghz power amplifier ref. : dscha6250 - qfg2272 - 28 sep 12 2 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 electrical characteristics tamb. = + 25c , vd = +7.0 v symbol parameter min typ max unit freq f requency range 5.5 9 ghz g ain linear gain 21 23.5 27 db g_t linear gain variation versus temperature - 0.03 db/c rl_in input return loss - 18 db rl_out output return loss - 14 db o p1db output power @1db comp. [5.5 - 6.8ghz] output power @1db comp. [6.8 - 9ghz] 32.5 31.5 33 .5 32.5 dbm dbm psat saturated output power 34.5 dbm o toi output toi 43 dbm pae power added efficiency @ 1db compression 29 % idq quiescent drain current 900 1000 ma vg gate voltage - 0.5 v these values are representative of onboard measurements as defined on the drawing in paragraph "evaluation mother board". absolute maximum ratings (1) tamb.= + 25c symbol parameter values unit vd drain bias voltage 7. 5v v id q drain bias current 1. 06 a vg gate bias voltage - 2 to +0 v pin input continuous power 15 dbm tj junction temperature (2) 175 c ta operating temperature range - 40 to +85 c tstg storage temperature range - 55 to +150 c (1) operation of this device above anyone of these parameters may cause permanent damage. typical bias conditions tamb.= + 25c symbol pad n o parameter values unit v d 1 30 dc drain voltage 1 st stage 7 v v d 2 28 dc drain voltage 2nd stage 7 v v d3 25 dc drain voltage 3rd stage 7 v vg 13 dc gate voltage tuned for idq= 0.9a - 0.5 v
5.5 - 9ghz power amplifier cha6250 - qfg ref. : dscha6250 - qfg2272 - 28 sep 12 3 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qub ec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 device thermal performances all the figures given in this section are obtained assuming that the qfn device is cooled down only by conduction through the package thermal pad (no convection mode considered). the temperature is monitored at the package back - side interface (tcase) as shown below. the system maximum temperature must be adjusted in order to guarantee that tcase remains below than the maximum value specified in the next table. so, the system pcb must be designed to comply with this requirement. a derating must be applied on the dissipated power if the tcase temperature can not be maintained below than the maximum temperature specified (see the curve pdiss. max) in order to guarantee the nominal device life time (mttf). recommended max. junction temperature (tj max) : 169 c junction temperature absolute maximum rating : 175 c max. continuous dissipated power (pdiss. max.) : 6.3 w => pdiss. max. derating above tcase (1) = 85 c : 75 mw/c junction-case thermal resistance (rth j-c) (2) : <13 c/w minimum tcase operating temperature (3) : -40 c maximum tcase operating temperature (3) : 85 c minimum storage temperature : -55 c maximum storage temperature : 150 c (1) derating at junctio n temperature co nstant = tj max. (2) rth j-c is calculated fo r a wo rst case co nsidering the ho t t e s t junc t io n o f the m m ic and all the devices biased. (3) tcase=p ackage back side temperature measured under the die-attach-pad (see the drawing belo w). 6.4 device thermal specification : CHA6250-QFG 0 1 2 3 4 5 6 7 - 50 - 25 0 25 50 75 100 125 150 175 pdiss. max. @tj cha6250 - qfg 5.5 - 9ghz power amplifier ref. : dscha6250 - qfg2272 - 28 sep 12 4 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements tamb.= +25c, vd = +7.0v, idq = 900ma measurement in the plan of the connectors, using the proposed land pattern & board, as defined in paragraph evaluation mother board linear gain & return loss linear gain versus temperature 1 - - 35 - 30 - 25 - 20 - 15 - 10 - 5 0 5 - 10 - 5 0 5 10 15 20 25 30 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 return loss (db) linear gain (db) frequency (ghz) linear gain rl_in rl_out 0 5 10 15 20 25 30 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 linear gain (db) frequency (ghz) temp=25 c temp= - 40 c temp=+85 c
5.5 - 9ghz power amplifier cha6250 - qfg ref. : dscha6250 - qfg2272 - 28 sep 12 5 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qub ec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements tamb.= +25c, vd = +7.0v, idq = 900ma measurement in the qfn access plans, using the proposed land pattern & board, as defined in paragraph evaluation mother board output power at 1 db compression power added efficiency at 1 db compression 2 - 10 15 20 25 30 35 40 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 pae (%) frequency (ghz) temp=25 c temp= - 40 c temp=+85 c 28 29 30 31 32 33 34 35 36 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 output p1db (db) frequency (ghz) temp=25 c temp= - 40 c temp=+85 c
cha6250 - qfg 5.5 - 9ghz power amplifier ref. : dscha6250 - qfg2272 - 28 sep 12 6 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements tamb.= +25c, vd = +7.0v, idq = 900ma drain current at 1 db compression output toi (dbm) at two pout/tone 3 - 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 id (a) frequency (ghz) temp=25 c temp= - 40 c temp=+85 c 39 40 41 42 43 44 45 46 47 48 6 6.5 7 7.5 8 8.5 9 output toi (dbm) frequency (ghz) pout/tone=14.5 dbm pout/tone=20.5 dbm
5.5 - 9ghz power amplifier cha6250 - qfg ref. : dscha6250 - qfg2272 - 28 sep 12 7 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qub ec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements tamb.= +25c, vd = +7.0v, idq = 900ma output c/i3 (dbc) versus pout / 2 tones 4 - 35 40 45 50 55 60 65 70 75 80 10 12 14 16 18 20 22 24 26 28 c/i3 (dbc) pout/2tones (dbm) freq=6 ghz freq=7 ghz freq=8 ghz freq=9 ghz
cha6250 - qfg 5.5 - 9ghz power amplifier ref. : dscha6250 - qfg2272 - 28 sep 12 8 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements tamb .= +25c linear gain vs vd at 0.9a linear gain vs vd at 1a power at 1db vs vd at 0.9a power at 1db vs vd at 1a output toi at pout/ tone= 7dbm output toi at pout/ tone= 13dbm output toi at pout/ tone= 19dbm 10 12 14 16 18 20 22 24 26 28 30 5 6 7 8 9 10 linear gain (db) frequency (ghz) 5v 6v 7v 10 12 14 16 18 20 22 24 26 28 30 5 6 7 8 9 10 linear gain (db) frequency (ghz) 5v 6v 7v 25 26 27 28 29 30 31 32 33 34 35 36 5 6 7 8 9 10 output p1db (dbm) frequency (ghz) 5v 6v 7v 25 26 27 28 29 30 31 32 33 34 35 36 5 6 7 8 9 10 output p1db (dbm) frequency (ghz) 5v 6v 7v 30 32 34 36 38 40 42 44 46 48 50 5.5 6 6.5 7 7.5 8 8.5 9 9.5 output toi (dbm) frequency (ghz) 7v - 0.9a 6v - 0.9a 5v - 1a 30 32 34 36 38 40 42 44 46 48 50 5.5 6 6.5 7 7.5 8 8.5 9 9.5 output toi (dbm) frequency (ghz) 7v - 0.9a 6v - 0.9a 5v - 1a 30 32 34 36 38 40 42 44 46 48 50 5.5 6 6.5 7 7.5 8 8.5 9 9.5 output toi (dbm) frequency (ghz) 7v - 0.9a 6v - 0.9a 5v - 1a
5.5 - 9ghz power amplifier cha6250 - qfg ref. : dscha6250 - qfg2272 - 28 sep 12 9 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qub ec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 package outline (1) matt tin, lead free (green) 1 - nc 12 - gnd (2) 23 - nc units : mm 2 - nc 13 - vg 24 - nc from the standard : jedec mo - 220 3 - gnd (2) 14 - nc 25 - vd3 (vggd) 4 - rf in 15 - nc 26 - gnd (2) 33 - gnd 5 - gnd (2) 16 - nc 27 - nc 6 - nc 17 - nc 28 - vd2 7 - nc 18 - nc 29 - gnd (2) 8 - nc 19 - nc 30 - vd1 9 - nc 20 - gnd (2) 31 - nc 10 - nc 21 - rf out 32 - nc 11 - nc 22 - gnd (2) (1) the package outline drawing included to this data - sheet is given for indication. refer to the application note an0017 ( http://www.ums - gaas.com ) for exact package dimensions. (2) it is strongly recommended to ground all pins marked gnd through the pcb board. ensure that the pcb board is designed to provide the best possible ground to t he package.
cha6250 - qfg 5.5 - 9ghz power amplifier ref. : dscha6250 - qfg2272 - 28 sep 12 10 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 evaluation mother board compatible with the proposed footprint. based on typically ro4003 / 8mils or equivalent. using a micro - strip to coplanar transition to access the package. recommended for the implementation of this prod uct on a module board. module should b e designed to dissipate around 6.3 w first decoupling network is done with 100pf capacitors, second decoupling network is done with 10nf capacitors. see application note an0017 for details.
5.5 - 9ghz power amplifier cha6250 - qfg ref. : dscha6250 - qfg2272 - 28 sep 12 11 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qub ec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 notes due to esd protection circuits on rf input, an external capacitance might be requested to isolate the product from external voltage that could be prese nt on the rf access . the dc connections do not include any decoupling capacitor in package, therefore it is mandatory to provide a good external dc decoupling ( 100pf & 10nf) on the pc board, as close as possible to the package. vd2 rf out rf in vg 4 21 28 13 vd3 25 vd1 30
cha6250 - qfg 5.5 - 9ghz power amplifier ref. : dscha6250 - qfg2272 - 28 sep 12 12 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 dc schematic 7v, 90 0ma 125 ma vg # - 0.5 v 520 ma 255 ma 100 ? rf in 50 ? 15 ? vd1 vd2 vd3 rf out
5.5 - 9ghz power amplifier cha6250 - qfg ref. : dscha6250 - qfg2272 - 28 sep 12 13 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qub ec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 note
cha6250 - qfg 5.5 - 9ghz power amplifier ref. : dscha6250 - qfg2272 - 28 sep 12 14 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended package footprint refer to the application note an0017 available at http://www.ums - gaas.com for package foot print recommendations. smd mounting procedure for the mounting process standard techniques involving solder paste and a suitable reflow process can be used. for further details, see application note an0017. recommended environmental management ums products are compliant with the regulation in particular with the directives rohs n2011/65 and reach n1907/2006. more envir onmental data are available in the application note an0019 also available at http://www.ums - gaas.com . recommended esd management refer to the application note an0020 available at http://www.ums - gaas.com for esd sensitivity and handling recommendations for the ums package products. ordering information qfn 5x5 rohs compliant package: cha6250 - qfg /xy stick: xy = 20 tape & reel: xy = 21 information furnished is believed to be accurate and reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in thi s publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors s.a.s.

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